Product overview
- BI Part Number
- BISM110C120
- Product group
- MOSFETs, SiC & IGBTs
- Product family
- SiC MOSFETs
- Function
- 1200 V SiC MOSFET
- Package
- TO-247-3
- Entry type
- Model
Electrical parameters
| Parameter | Value |
|---|---|
| BVDSS (V) | 1200 |
| Drain current (A) | 110 |
| On resistance (Ω) | 0.019 |
| Gate threshold min (V) | 1.5 |
| Gate threshold max (V) | 3.5 |
Values are transcribed from the selection handbook. Separate listings preserve differing records for the same model. “—” indicates an unlisted value. Use the device documentation for design limits and test conditions.